FDD6N50F - MOSFET

Fairchild (now onsemi)

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

RDS(on) = 950 mΩ (Typ. ) @ VGS = 10 V, ID = 2.75 A.
Low Gate Charge (Typ. 15nC).
Low Crss (Typ. 6.3pF).
100% Avalanche Tested.
Improved dv/dt Capability.
RoHS Compliant.

📥 Download Datasheet

FDD6N50F mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FDD6N50F
Manufacturer	Fairchild (now onsemi)
File Size	607.16 KB
Description	MOSFET
Datasheet	FDD6N50F Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
FDD6N50	N-Channel MOSFET	ON Semiconductor
FDD6N50TM-F085	N-Channel MOSFET	ON Semiconductor
FDD6530A	20V N-Channel Power MOSFET	ON Semiconductor
FDD6606	30V N-Channel PowerTrench MOSFET	Advanced Analogic Technologies
FDD6630A	N-Channel MOSFET	On Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number	Description
FDD6N50	N-Channel MOSFET
FDD6N50TM_F085	500V N-Channel MOSFET
FDD6N20	MOSFET
FDD6N20TM	MOSFET
FDD6N25	N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

FDD6N50F — N-Channel UniFETTM FRFET® MOSFET FDD6N50F N-Channel UniFETTM FRFET® MOSFET 500 V, 5.5 A, 1.15 Ω November 2013 Features • RDS(on) = 950 mΩ (Typ.) @ VGS = 10 V, ID = 2.75 A • Low Gate Charge (Typ. 15nC) • Low Crss (Typ. 6.3pF) • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Applications • LCD/LED/PDP TV • Lighting • Uninterruptible Power Supply • AC-DC Power Supply Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. The body diode’s reverse recovery performance of UniFET FRFET® MOSFET has been enhanced by lifetime control.