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FDD770N15A - MOSFET

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

DC to DC Converters Synchronous Rectification for Server / Tel

Features

  • RDS(on) = 61 mΩ ( Typ. ) @ VGS = 10 V, ID = 12 A.
  • Fast Switching Speed.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(on).
  • High Power and Current Handling Capability.
  • RoHS Compliant.

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Full PDF Text Transcription

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FDD770N15A — N-Channel PowerTrench® MOSFET April 2015 FDD770N15A N-Channel PowerTrench® MOSFET 150 V, 18 A, 77 mΩ Features • RDS(on) = 61 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Fast Switching Speed • Low Gate Charge • High Performance Trench Technology for Extremely Low RDS(on) • High Power and Current Handling Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
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