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FDD770N15A - N-Channel MOSFET

FDD770N15A Description

isc N-Channel MOSFET Transistor FDD770N15A *.

FDD770N15A Features

* Static drain-source on-resistance: RDS(on)≤77mΩ
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

FDD770N15A Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 18 IDM Drain Current-Single Pulsed 36 PD Total Dissipation @TC=25℃ 56.8 Tj Max. Operating Junction Temperature 150 Tstg Storage T

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Datasheet Details

Part number
FDD770N15A
Manufacturer
INCHANGE
File Size
273.87 KB
Datasheet
FDD770N15A-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDD770N15A-like datasheet