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FDD8N50NZ - N-Channel MOSFET

FDD8N50NZ Description

Isc N-Channel MOSFET Transistor FDD8N50NZ *.

FDD8N50NZ Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDD8N50NZ Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±25 6.5 3.9 26 PD Total Dissipation @TC=25℃ 90 Tch Max. Operating

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Datasheet Details

Part number
FDD8N50NZ
Manufacturer
INCHANGE
File Size
219.51 KB
Datasheet
FDD8N50NZ-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
INCHANGE FDD8N50NZ-like datasheet