FDD8426H Dual P and N-Channel MOSFET

Fairchild Semiconductor

Description

FDD8426H Dual N & P-Channel PowerTrench® MOSFET September 2009 FDD8426H Dual N & P-Channel PowerTrench® MOSFET .
These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been esp.

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Datasheet Specifications

Part number: FDD8426H
Manufacturer: Fairchild Semiconductor
File Size: 521.01 KB
Datasheet: FDD8426H_FairchildSemiconductor.pdf
Description: Dual P and N-Channel MOSFET

Features

* Q1: N-Channel
* Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A
* Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel
* Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A
* Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A
* 100% UIL Tested
* RoHS Comp

Applications

* Inverter
* H-Bridge D1 D1/D2 D2 G1 G2 S2 G1 S1 Dual DPAK 4L S1 N-Channel G2 S2 P-Channel www. DataSheet4U. com MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current - Continuous (Package Li

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FDD8426H Dual and N-Channel MOSFET Fairchild Semiconductor

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