FDD8426H Datasheet - Fairchild Semiconductor

FDD8426H Dual P and N-Channel MOSFET

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Applications * Inverter * H-Bridge .

FDD8426H Features

* Q1: N-Channel

* Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A

* Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel

* Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A

* Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A

* 100% UIL Tested

* RoHS Comp

FDD8426H_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FDD8426H

Manufacturer:

Fairchild Semiconductor

File Size:

521.01 KB

Description:

Dual p and n-channel mosfet.

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FDD8426H FDD8426H Dual and N-Channel MOSFET Fairchild Semiconductor

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