FDD8426H Datasheet (Fairchild Semiconductor) - Dual P and N-Channel MOSFET

FDD8426H, Dual P and N-Channel MOSFET

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Applications * Inverter * H-Bridge

FDD8426H Features

* Q1: N-Channel

* Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A

* Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel

* Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A

* Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A

* 100% UIL Tested

* RoHS Comp