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FDD8426H - Dual P and N-Channel MOSFET

Datasheet Summary

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Inverter H-Bridge

Features

  • Q1: N-Channel.
  • Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel.
  • Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A.
  • Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A.
  • 100% UIL Tested.
  • RoHS Compliant N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ General.

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Datasheet Details

Part number FDD8426H
Manufacturer Fairchild Semiconductor
File Size 521.01 KB
Description Dual P and N-Channel MOSFET
Datasheet download datasheet FDD8426H Datasheet
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FDD8426H Dual N & P-Channel PowerTrench® MOSFET September 2009 FDD8426H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 12 mΩ at VGS = 10 V, ID = 12 A „ Max rDS(on) = 15 mΩ at VGS = 4.5 V, ID = 11 A Q2: P-Channel „ Max rDS(on) = 17 mΩ at VGS = -10 V, ID = -10 A „ Max rDS(on) = 27 mΩ at VGS = -4.5 V, ID = -8.3 A „ 100% UIL Tested „ RoHS Compliant N-Channel: 40 V, 12 A, 12 mΩ P-Channel: -40 V, -10 A, 17 mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
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