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FDD8453LZ - N-Channel Power Trench MOSFET

Datasheet Summary

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Inverter Synchronous Recti

Features

  • Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A.
  • Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A.
  • HBM ESD protection level >7kV typical (Note 4).
  • RoHS Compliant General.

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Datasheet Details

Part number FDD8453LZ
Manufacturer Fairchild Semiconductor
File Size 444.27 KB
Description N-Channel Power Trench MOSFET
Datasheet download datasheet FDD8453LZ Datasheet
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Full PDF Text Transcription

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FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ Features „ Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level >7kV typical (Note 4) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
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