FDD8453LZ Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.
FDD8453LZ Key Features
- Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A
- Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A
- HBM ESD protection level >7kV typical (Note 4)
- RoHS pliant