FDD8453LZ Datasheet | Fairchild Semiconductor

FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ Features - Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A - Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A - HBM ESD protection level >7kV typical (Note 4) - RoHS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications - Inverter - Synchronous Rectifier DT O- P-2A5K2 (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDS...