Datasheet4U Logo Datasheet4U.com

FDD8453LZ - N-Channel Power Trench MOSFET

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss.

G-S zener has been added to enhance ESD voltage level.

Inverter Synchronous Recti

Key Features

  • Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A.
  • Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A.
  • HBM ESD protection level >7kV typical (Note 4).
  • RoHS Compliant General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDD8444-F085 N-Channel Power MOSFET ON Semiconductor
FDD8444L_F085 N-Channel PowerTrench MOSFET FAIRCHILD
FDD86069-F085 N-Channel Power MOSFET ON Semiconductor
FDD86102LZ N-Channel MOSFET INCHANGE
FDD86250 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FDD8453LZ_F085 N-Channel Power Trench MOSFET
FDD8451 N-Channel MOSFET
FDD8424H Dual N & P-Channel PowerTrench MOSFET
FDD8424H_F085A Dual N & P-Channel PowerTrench MOSFET
FDD8426H Dual P and N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDD8453LZ N-Channel PowerTrench® MOSFET March 2015 FDD8453LZ N-Channel PowerTrench® MOSFET 40V, 50A, 6.7mΩ Features „ Max rDS(on) = 6.7mΩ at VGS = 10V, ID = 15A „ Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 13A „ HBM ESD protection level >7kV typical (Note 4) „ RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level.