FDD8424H_F085A Datasheet (Fairchild Semiconductor) - Dual N & P-Channel PowerTrench MOSFET

FDD8424H_F085A, Dual N & P-Channel PowerTrench MOSFET

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Application * Inverter * H-Bridge D1

FDD8424H_F085A Features

* Q1: N-Channel

* Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A

* Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel

* Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A

* Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A

* Fast switching speed

* Qualified to