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FDD86250 - N-Channel MOSFET

FDD86250 Description

Isc N-Channel MOSFET Transistor FDD86250 *.

FDD86250 Features

* With To-252(DPAK) package
* Low input capacitance and gate charge
* Low gate input resistance
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation

FDD86250 Applications

* Switching applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 150 VGSS Gate-Source Voltage ±20 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 40 PD Total Dissipation @TC=25℃ 132 Tch Max. Operating Junction Tempe

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Datasheet Details

Part number
FDD86250
Manufacturer
INCHANGE
File Size
258.03 KB
Datasheet
FDD86250-INCHANGE.pdf
Description
N-Channel MOSFET

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📌 All Tags

N-Channel MOSFET INCHANGE
INCHANGE FDD86250-like datasheet