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FDD86326 - N-Channel MOSFET

General Description

Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface

Key Features

  • General.

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Full PDF Text Transcription (Reference)

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FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ Features General Description „ Shielded Gate MOSFET Technology „ Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A „ Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package „ Very low Qg and Qgd compared to competing trench technologies „ Fast switching speed „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for rDS(on), switching performance and ruggedness.