FDD86326 Datasheet | Fairchild Semiconductor

FDD86326 N-Channel Shielded Gate PowerTrench® MOSFET March 2015 N-Channel Shielded Gate PowerTrench® MOSFET 80 V, 37 A, 23 mΩ Features General Description - Shielded Gate MOSFET Technology - Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A - Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A - High performance trench technology for extremely low rDS(on) - High power and current handling capability in a widely used surface mount package - Very low Qg and Qgd pared to peting trench technologies - Fast switching speed - 100% UIL tested - RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate...