FDD86326 Description
Shielded Gate MOSFET Technology Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A High performance trench technology for extremely low rDS(on) High power and current handling capability in a widely used surface mount package Very low Qg and Qgd pared to peting trench technologies Fast switching speed 100% UIL tested RoHS pliant This N-Channel MOSFET is...
FDD86326 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 23 mΩ at VGS = 10 V, ID = 8 A
- Max rDS(on) = 37 mΩ at VGS = 6 V, ID = 4.6 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- Very low Qg and Qgd pared to peting trench
- Fast switching speed
- 100% UIL tested
- RoHS pliant
- DC Conversion