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FDD8424H - Dual N & P-Channel PowerTrench MOSFET

Datasheet Summary

Description

These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.

Inverter H-Bridge

Features

  • Q1: N-Channel.
  • Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A.
  • Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel.
  • Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A.
  • Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A.
  • Fast switching speed.
  • RoHS Compliant tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ General.

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Datasheet Details

Part number FDD8424H
Manufacturer Fairchild Semiconductor
File Size 421.89 KB
Description Dual N & P-Channel PowerTrench MOSFET
Datasheet download datasheet FDD8424H Datasheet
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FDD8424H Dual N & P-Channel PowerTrench® MOSFET March 2007 FDD8424H Dual N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 24mΩ at VGS = 10V, ID = 9.0A „ Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 7.0A Q2: P-Channel „ Max rDS(on) = 54mΩ at VGS = -10V, ID = -6.5A „ Max rDS(on) = 70mΩ at VGS = -4.5V, ID = -5.6A „ Fast switching speed „ RoHS Compliant tm N-Channel: 40V, 20A, 24mΩ P-Channel: -40V, -20A, 54mΩ General Description These dual N and P-Channel enhancement mode Power MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench- process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. Application „ Inverter „ H-Bridge D1 D2 D1/D2 www.DataSheet4U.
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