FDFMA3N109 Datasheet Integrated P-Channel PowerTrench MOSFET and Schottky Diode

Manufacturer: Fairchild (now onsemi)

Datasheet Details

Part number	FDFMA3N109
Manufacturer	Fairchild (now onsemi)
File Size	419.70 KB
Description	Integrated P-Channel PowerTrench MOSFET and Schottky Diode
Datasheet	FDFMA3N109 Datasheet

This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications.

July 2014 FDFMA3N109 Integrated N-Channel PowerTrench® MOSFET and Schottky Diode.

a MOSFET with low input capacitance, total gate charge and onstate resistance, and an independently connected schottky diode with low forward voltage and reverse leakage current to maximize boost efficiency. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode.

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