FDFMA2P853 Datasheet | Fairchild Semiconductor

FDFMA2P853 Integrated P-Channel Power Trench® MOSFET and Schottky Diode July 2014 Integrated P-Channel Power Trench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It Features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal perfo rmance for it's physlicsaize and is well suited to linear mode applications. Features MOSFET: - -3.0 A, -20V. RDS(ON) = 120 m: @ VGS = -4.5 V RDS(ON) = 160 m: @ VGS = -2.5 V RDS(ON) = 240 m: @ VGS = -1.8 V Schottky: VF < 0.46 V @ 500 m A - Low Profile - 0.8 mm maximun - in the new package Micro FET 2x2 mm - Ro HS pliant A NC D A1 NC 2 D3 Micro FET C G...