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FDFMA2P857 - Integrated P-Channel PowerTrench MOSFET and Schottky Diode

General Description

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications.

Key Features

  • MOSFET:.
  • Max rDS(on) = 120mΩ at VGS =.
  • 4.5V, ID =.
  • 3.0A.
  • Max rDS(on) = 160mΩ at VGS =.
  • 2.5V, ID =.
  • 2.5A.
  • Max rDS(on) = 240mΩ at VGS =.
  • 1.8V, ID =.
  • 1.0A General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode February 2007 FDFMA2P857 Integrated P-Channel PowerTrench® MOSFET and Schottky Diode –20V, –3.0A, 120mΩ Features MOSFET: „ Max rDS(on) = 120mΩ at VGS = –4.5V, ID = –3.0A „ Max rDS(on) = 160mΩ at VGS = –2.5V, ID = –2.5A „ Max rDS(on) = 240mΩ at VGS = –1.8V, ID = –1.0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.