FDFMA2P857 Datasheet | Fairchild Semiconductor

FDFMA2P857 Integrated P-Channel Power Trench® MOSFET and Schottky Diode February 2007 Integrated P-Channel Power Trench® MOSFET and Schottky Diode - 20V, - 3.0A, 120mΩ Features MOSFET: - Max r DS(on) = 120mΩ at VGS = - 4.5V, ID = - 3.0A - Max r DS(on) = 160mΩ at VGS = - 2.5V, ID = - 2.5A - Max r DS(on) = 240mΩ at VGS = - 1.8V, ID = - 1.0A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It Features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The Micro FET 2x2 package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Schottky: - VF < 0.54V @ 1A - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant Pin 1 A NC D A 1 .. 6 C 5 G 4 S NC 2 D 3 C Micro FET 2x2 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings 20...