FDFMA2P859T Datasheet | Fairchild Semiconductor

FDFMA2P859T Integrated P-Channel Power Trench® MOSFET and Schottky Diode - 20 V, - 3.0 A, 120 m: Features MOSFET: - Max r DS(on) = 120 m: at VGS = - 4.5 V, ID = - 3.0 A - Max r DS(on) = 160 m: at VGS = - 2.5 V, ID = - 2.5 A - Max r DS(on) = 240 m: at VGS = - 1.8 V, ID = - 1.0 A July 2009 Integrated P-Channel Power Trench® MOSFET and Schottky Diode General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It Features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The Micro FET 2x2 Thin package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Schottky: - VF < 0.54 V @ 1 A - Low profile - 0.55 mm maximum - in the new package Micro FET 2x2 Thin - Free from halogenated pounds and antimony oxides - Ro HS pliant Pin 1 A NC D A 1 NC 2 D 3 C Micro FET 2x2 Thin G S 6 C 5 G 4 S MOSFET .. Symbol VDSS VGSS ID PD TJ, TSTG VRRM IO Maximum Ratings TA = 25 °C unless otherwise noted Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) (Note 1b) (Note 1a) Ratings - 20...