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FDFMA2N028Z - Integrated N-Channel PowerTrench MOSFET and Schottky Diode

General Description

MOSFET Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A HBM ESD protection level > 2kV (Note 3) Schottky VF < 0.37V @ 500mA Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm RoHS Compl

Key Features

  • General.

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FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode July 2014 FDFMA2N028Z Integrated N-Channel PowerTrench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ Features General Description MOSFET „ Max rDS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A „ Max rDS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A „ HBM ESD protection level > 2kV (Note 3) Schottky „ VF < 0.37V @ 500mA „ Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm „ RoHS Compliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage.