FDFMA2N028Z Datasheet | Fairchild Semiconductor

FDFMA2N028Z Integrated N-Channel Power Trench® MOSFET and Schottky Diode July 2014 Integrated N-Channel Power Trench® MOSFET and Schottky Diode 20V, 3.7A, 68mΩ Features General Description MOSFET - Max r DS(on) = 68mΩ at VGS = 4.5V, ID = 3.7A - Max r DS(on) = 86mΩ at VGS = 2.5V, ID = 3.3A - HBM ESD protection level > 2k V (Note 3) Schottky - VF < 0.37V @ 500m A - Low profile - 0.8 mm maximum - in the new package Micro FET 2x2 mm - Ro HS pliant This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable applications. It Features a MOSFET with low on-state resistance, and an independently connected schottky diode with low forward voltage. The Micro FET 2x2 package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications. Application - DC - DC Conversion Pin 1 A NC D A1 6C NC 2 5G D3 4S CG S Micro FET 2X2 MOSFET Maximum Ratings TJ = 25°C unless otherwise...