FDFMA2P853T Datasheet | Fairchild Semiconductor

FDFMA2P853T Integrated P-Channel Power Trench® MOSFET and Schottky Diode December 2008 Integrated P-Channel Power Trench® MOSFET and Schottky Diode .. tm - 20 V, - 3.0 A, 120 mΩ Features MOSFET: - Max r DS(on) = 120 mΩ at VGS = - 4.5 V, ID = - 3.0 A - Max r DS(on) = 160 mΩ at VGS = - 2.5 V, ID = - 2.5 A - Max r DS(on) = 240 mΩ at VGS = - 1.8 V, ID = - 1.0 A General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It Features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for minimum conduction losses. The Micro FET 2x2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Schottky: - VF < 0.46 V @ 500 m A - Low profile - 0.55 mm maximum - in the new package Micro FET 2x2 Thin - Ro HS pliant - Free from halogenated pounds and antimony oxides Pin 1 A NC D A 1 NC 2 D 3 6 C 5 G 4 S Micro FET 2X2 Thin Symbol VDS VGS ID PD TJ, TSTG VRRM IO Ratings - 20 ±8 (Note 1a) (Note 1a) (Note...