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FDFS2P753Z - P-Channel MOSFET and Schottky Diode

Description

Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A VF < 500mV @ 1A VF < 580mV @ 2A Schottky and MOSFET incorporated into single power surface mount SO-8 package Electrically independent Schottky and MOSFET p

Features

  • General.

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Full PDF Text Transcription

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FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description „ Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A „ Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A „ VF < 500mV @ 1A VF < 580mV @ 2A „ Schottky and MOSFET incorporated into single power surface mount SO-8 package „ Electrically independent Schottky and MOSFET pinout for design flexibility „ RoHS Compliant The FDFS2P753Z combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters.
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