FDFS2P753Z Datasheet | Fairchild Semiconductor

FDFS2P753Z Integrated P-Channel PowerTrench® MOSFET and Schottky Diode November 2006 FDFS2P753Z tm Integrated P-Channel PowerTrench® MOSFET and Schottky Diode -30V, -3A, 115mΩ Features General Description - Max rDS(on) = 115mΩ at VGS = -10V, ID = -3.0A - Max rDS(on) = 180mΩ at VGS = -4.5V, ID = -1.5A - VF < 500mV @ 1A VF < 580mV @ 2A - Schottky and MOSFET incorporated into single power surface mount SO-8 package - Electrically independent Schottky and MOSFET pinout for design flexibility - RoHS pliant The FDFS2P753Z bines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8...