FDG6318P Datasheet, Fairchild Semiconductor

*
  –0.5 A,
  –20 V. RDS(ON) = 780 mΩ @ VGS =
  –4.5 V RDS(ON) = 1200 mΩ @ VGS =
  –2.5 V
* Very low leve.

as a replacement for bipolar digital transistors and small signal MOSFETS. Features
*
  –0.5 A,
&.