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FDG6301N - Dual N-Channel Digital FET

Datasheet Summary

Description

These dual N

transistors are produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance.

Features

  • 25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V.
  • Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.5 V).
  • Gate.
  • Source Zener for ESD Ruggedness (>6 kV Human Body Model).
  • Compact Industry Standard SC70.
  • 6 Surface Mount Package.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FDG6301N

Datasheet Details

Part number FDG6301N
Manufacturer ON Semiconductor
File Size 233.56 KB
Description Dual N-Channel Digital FET
Datasheet download datasheet FDG6301N Datasheet
Additional preview pages of the FDG6301N datasheet.

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Full PDF Text Transcription

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Digital FET, Dual N-Channel FDG6301N General Description These dual N−Channel logic level enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on−state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs. Features  25 V, 0.22 A Continuous, 0.65 A Peak  RDS(ON) = 4 W @ VGS = 4.5 V  RDS(ON) = 5 W @ VGS = 2.7 V  Very Low Level Gate Drive Requirements Allowing Direct Operation in 3 V Circuits (VGS(th) < 1.
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