Datasheet Summary
MOSFET
- Dual, N-Channel, POWERTRENCH)
20 V, 2.1 A, 550 mW
General Description
This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely
Iow RDS(ON) and gate charge (QG) in a small package.
Features
- 0.7 A, 20 V
RDS(ON) = 400 mW @ VGS = 4.5 V RDS(ON) = 550 mW @ VGS = 2.5 V
- Gate-Source Zener for ESD Ruggedness. HBM Class 1C
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(ON)
- pact Industry Standard SC70-6 Surface Mount Package
- These...
