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FDG6317NZ Datasheet Dual N-channel MOSFET

Manufacturer: onsemi

Overview: MOSFET – Dual, N-Channel, POWERTRENCH) 20 V, 2.1 A, 550 mW FDG6317NZ.

General Description

This dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC-DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized use in small switching regulators, providing an extremely Iow RDS(ON) and gate charge (QG) in a small package.

Key Features

  • 0.7 A, 20 V  RDS(ON) = 400 mW @ VGS = 4.5 V  RDS(ON) = 550 mW @ VGS = 2.5 V.
  • Gate-Source Zener for ESD Ruggedness. HBM Class 1C.
  • Low Gate Charge.
  • High Performance Trench Technology for Extremely Low RDS(ON).
  • Compact Industry Standard SC70-6 Surface Mount Package.
  • These Devices are Pb-Free and are RoHS Compliant.

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