dual n-channel mosfet.
* 0.7 A, 20 V
* RDS(ON) = 400 mW @ VGS = 4.5 V
* RDS(ON) = 550 mW @ VGS = 2.5 V
* Gate−Source Zener for ESD Ruggedness
* Low Gate Charge
* High Pe.
* DC−DC Converter
* Power Management
* Load Switch
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symb.
This dual N−Channel MOSFET has been designed specifically to
improve the overall efficiency of DC−DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an .
Image gallery
TAGS
Download (Size : 235.28KB)