FDG6322C Datasheet - Fairchild Semiconductor

Dual N & P Channel Digital FET

FDG6322C Features

* N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small package outline SC70-6. Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V). Gate-So

FDG6322C General Description

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low volta.

FDG6322C Datasheet (247.78 KB)

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FDG6322C

Manufacturer:

Fairchild Semiconductor

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247.78 KB

Description:

Dual n & p channel digital fet.

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FDG6322C Dual Channel Digital FET Fairchild Semiconductor

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FDG6322C Features

FDG6322C General Description

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