FDI025N06 Datasheet | Fairchild Semiconductor

FDI025N06 N-Channel Power Trench® MOSFET June 2008 N-Channel Power Trench® MOSFET 60V, 265A, 2.5mΩ tm Features - RDS(on) = 1.9mΩ ( Typ.) @ VGS = 10V, ID = 75A - Fast switching speed - Low gate charge - High performance trench technology for extremely low RDS(on) - High power and current handling capability - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC to DC convertors / Synchronous Rectification TO-262 FDI Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol Parameter Ratings VDSS VGSS IDM EAS dv/dt Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt...