FDI025N06 - MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDI025N06
Manufacturer	Fairchild Semiconductor
File Size	502.36 KB
Description	MOSFET
Datasheet	FDI025N06 Datasheet
Additional preview pages of the FDI025N06 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC to DC convertors / Synchronous Rectification D GDS TO-262 FDI Series G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted Symbol Parameter Ratings VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain Current Drain

Features

RDS(on) = 1.9mΩ ( Typ. ) @ VGS = 10V, ID = 75A.
Fast switching speed.
Low gate charge.
High performance trench technology for extremely low RDS(on).
High power and current handling capability.
RoHS compliant General.

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Published: Jan 13, 2017 |