FDI040N06 Datasheet | Fairchild Semiconductor

ures - RDS(on) = 3.2mΩ ( Typ.) @ VGS = 10V, ID = 75A - Fast Switching Speed - Low Gate Charge - High Performance Trench Technology for Extremely Low RDS(on) - High Power and Current Handling Capability - Ro HS pliant tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application - DC to DC convertors / Synchronous Rectification I2-PAK FDI Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol .. VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID IDM EAS dv/dt PD TJ, TSTG TL Drain Current Drain Current Single Pulsed Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C Parameter Ratings 60 ±20 -Continuous (TC = 25o C, Silicion Limited) -Continuous (TC = 100o C, Silicion Limited) -Continuous (TC = 25o C, Package Limited) - Pulsed (Note 1) (Note 2) (Note 3) 168- 118- 120 672 872 7.0 231 1.54 -55 to +175 300 A m J V/ns W W/o C o Units V V A Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds C o C - Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 120A. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Ratings 0.65 62.5 Units o C/W ©2009 Fairchild Semiconductor Corporation FDI040N06 Rev. A .fairchildsemi. FDI040N06 N-Channel Power Trench® MOSFET Package Marking and Ordering Information Device Marking FDI038N06 Device FDI038N06 Package TO-262 Reel Size Tube Tape Width Quantity 50 Electrical Characteristics TC = 25o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max....