FDL100N50F Datasheet | Fairchild Semiconductor

FDL100N50F N-Channel MOSFET N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features - RDS(on) = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A - Low gate charge ( Typ. 238nC) - Low Crss ( Typ. 64pF) - Fast switching - 100% avalanche tested - Improved dv/dt capability - RoHS pliant UniFETTM May 2009 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high...