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FDMA520PZ - Single P-Channel MOSFET

Description

June 2014 Max rDS(on) = 30m: at VGS = 4.5V, ID = 7.3A Max rDS(on) = 53m: at VGS = 2.5V, ID = 5.5A Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm HBM ESD protection level > 3k V typical (Note 3)

Features

  • General.

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Full PDF Text Transcription

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FDMA520PZ Single P-Channel PowerTrench® MOSFET FDMA520PZ Single P-Channel PowerTrench® MOSFET –20V, –7.3A, 30m: Features General Description June 2014 „ Max rDS(on) = 30m: at VGS = –4.5V, ID = –7.3A „ Max rDS(on) = 53m: at VGS = –2.5V, ID = –5.5A „ Low profile - 0.8mm maximum - in the new package MicroFET 2X2 mm „ HBM ESD protection level > 3k V typical (Note 3) „ Free from halogenated compounds and antimony oxides „ RoHS Compliant This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
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