FDMC86102LZ Key Features
- Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 6.5 A
- Max rDS(on) = 35 mΩ at VGS = 4.5 V, ID = 5.5 A
- HBM ESD protection level > 6 KV typical (Note 4)
- 100% UIL Tested
- RoHS pliant
- DC Switching
- Part: FDMC86102LZ
- Description: N-Channel Power Trench MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 297.76 KB
Other FDMC86102LZ Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
onsemi |
FDMC86102LZ | N-Channel MOSFET |
|
onsemi |
FDMC86102L | N-Channel MOSFET |
|
onsemi |
FDMC86102 | N-Channel MOSFET |