FDMC86261P Key Features
- Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A
- Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A
- Very low RDS-on mid voltage P channel silicon technology
- This product is optimised for fast switching
- Part: FDMC86261P
- Description: MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 336.78 KB
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