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FDMC86240 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

General Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A „ Low Profile - 1 mm max in Power 33 „ 100% UIL Tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

Application „ DC - DC Conversion Top Bottom Pin 1 S D SS S G S D S D D D G D D D MLP 3.3x3.3 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 150 ±20 16 4.6 20 34 40 2.3 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.1 (Note 1a) 53 °C/W Device Marking FDMC86240 Device FDMC86240 Package Power 33 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2010 Fairchild Semiconductor Corporation 1 FDMC86240 Rev.C4 www.fairchildsemi.com FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ΔBVDSS ΔTJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250 μA, VGS = 0 V ID = 250 μA, referenced to 25

Overview

FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET June 2014 FDMC86240 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 16 A, 51.

Key Features

  • General.