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FDMS3662 - MOSFET

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FDMS3662 Product details

Description

Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100% UIL Tested RoHS Compliant Application DC - DC Conversion Top Bottom Pin 1 Pin 1 S

Features

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