FDMS3662
Description
Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A - Advanced Package and Silicon bination for low rDS(on) - MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
