FDMS3662 Description
Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon bination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100% UIL Tested RoHS pliant Application DC - DC Conversion Top...
FDMS3662 Key Features
- Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant
- DC Conversion