FDMS3668S Key Features
- Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
- Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A
- Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
- Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
- MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing
- RoHS pliant