FDMS5352 Description
at VGS = 10V, ID = 13.6A Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A Advanced Package and Silicon bination for low rDS(on) MSL1 robust package design This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. 100% UIL Tested Application RoHS pliant ...
FDMS5352 Key Features
- Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A
- Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A
- Advanced Package and Silicon bination for low rDS(on)
- MSL1 robust package design
- 100% UIL Tested
- RoHS pliant
- DC Conversion