FDMS5352 mosfet equivalent, n-channel power trench mosfet.
General Description
* Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A
* Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A
* Advanced Package and Silicon combinatio.
* Max rDS(on) = 6.7m: at VGS = 10V, ID = 13.6A
* Max rDS(on) = 8.2m: at VGS = 4.5V, ID = 12.3A
* Advanced Package and Silicon combination for low rDS(on)
* MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild.
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