FDMS86201 mosfet equivalent, n-channel mosfet.
General Description
* Shielded Gate MOSFET Technology
* Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
* Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A <.
* Shielded Gate MOSFET Technology
* Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A
* Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A
* Advanced Package and Silicon combination for low rDS(on)
and high efficiency
* MSL1 robust p.
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