FDMS8622 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMS8622
Manufacturer	Fairchild Semiconductor
File Size	571.86 KB
Description	N-Channel MOSFET
Datasheet	FDMS8622 Datasheet
Additional preview pages of the FDMS8622 datasheet.

Product details

Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology. POE Protection Switch DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drai

Features

Shielded Gate MOSFET Technology.
Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant General.

📁 Similar Datasheet

FDMS86200 - N-Channel MOSFET (ON Semiconductor)
FDMS86255 - N-Channel MOSFET (ON Semiconductor)
FDMS86263P - P-Channel MOSFET (ON Semiconductor)
FDMS86101 - N-Channel MOSFET (ON Semiconductor)
FDMS86101DC - N-Channel MOSFET (ON Semiconductor)
FDMS86163P - P-Channel MOSFET (ON Semiconductor)
FDMS86181 - N-Channel MOSFET (ON Semiconductor)
FDMS86300DC - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDMS86200DC - MOSFET
FDMS86201 - N-Channel MOSFET
FDMS86202 - MOSFET
FDMS86202ET120 - MOSFET
FDMS86250 - N-Channel MOSFET
FDMS86252 - N-Channel MOSFET

Published: Aug 8, 2013 |