FDMS8622 - N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDMS8622
Manufacturer	Fairchild Semiconductor
File Size	571.86 KB
Description	N-Channel MOSFET
Datasheet	FDMS8622 Datasheet
Additional preview pages of the FDMS8622 datasheet.

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

POE Protection Switch DC-DC Switch Top Bottom Pin

Shielded Gate MOSFET Technology.
Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
High performance trench technology for extremely low rDS(on).
High power and current handling capability in a widely used surface mount package.
100% UIL Tested.
Termination is Lead-free and RoHS Compliant General.

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Published: Aug 8, 2013 |