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FDMS8622 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET August 2018 FDMS8622 N-Channel Shielded Gate PowerTrench® MOSFET 100 V, 16.

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General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for rDS(on), switching performance and ruggedness.

Applications  POE Protection Switch  DC-DC Switch Top Bottom Pin 1 SS D S S G S D Power 56 D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics S G (Note 1a) (Note 3) (Note 1a) D D Ratings 100 ±20 16.5 4.8 30 12 31 2.5 -55 to +150 Units V V A mJ W °C RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information (Note 1) (Note 1a) 4 50 °C/W Device Marking FDMS8622 Device FDMS8622 Package Power56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2011 Semiconductor Components Industries, LLC.

Key Features

  • Shielded Gate MOSFET Technology.
  • Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A.
  • Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A.
  • High performance trench technology for extremely low rDS(on).
  • High power and current handling capability in a widely used surface mount package.
  • 100% UIL Tested.
  • Termination is Lead-free and RoHS Compliant General.

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