FDMS8622 Key Features
- Shielded Gate MOSFET Technology
- Max rDS(on) = 56 m at VGS = 10 V, ID = 4.8 A
- Max rDS(on) = 88 m at VGS = 6 V, ID = 3.9 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used
- 100% UIL Tested
- Termination is Lead-free and RoHS pliant