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FDMS86250 Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A „ Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A „ Advanced package and silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.

This process has been optimized for the on-state resistance and yet maintain superior switching performance.

„ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant Application „ DC-DC Conversion Top Bottom Pin 1 S S D S S G S D S D D D D G D D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 4) (Note 3) (Note 1a) Ratings 150 ±20 30 6.7 100 180 96 2.5 -55 to +150 Units V V A mJ W °C RθJC RθJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 1.3 (Note 1a) 50 °C/W Device Marking FDMS86250 Device FDMS86250 Package Power 56 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units ©2012 Fairchild Semiconductor Corporation 1 FDMS86250 Rev.

Overview

FDMS86250 N-Channel Shielded Gate PowerTrench® MOSFET FDMS86250 October 2014 N-Channel Shielded Gate PowerTrench® MOSFET 150 V, 30 A, 25.

Key Features

  • General.

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