Download FDMS86250 Datasheet PDF
FDMS86250 datasheet preview
FDMS86250 page 2
Page 2
FDMS86250 page 3
Page 3

FDMS86250 Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A
  • Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A
  • Advanced package and silicon bination for low rDS(on) and
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS pliant
  • DC-DC Conversion
  • 55 to +150

Related Fairchild Datasheets

Part Number Description
FDMS86252 N-Channel MOSFET
FDMS86255 MOSFET
FDMS86255ET150 MOSFET
FDMS86200 N-Channel MOSFET
FDMS86200DC MOSFET

FDMS86250 Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 25 mΩ at VGS = 10 V, ID = 6.7 A „ Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.8 A „ Advanced package and silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet...