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FDMS86252 Key Features

  • Shielded Gate MOSFET Technology
  • Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A
  • Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A
  • Advanced package and silicon bination for low rDS(on) and
  • MSL1 robust package design
  • 100% UIL tested
  • RoHS pliant
  • DC-DC Conversion
  • 55 to +150

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FDMS86252 Description

„ Shielded Gate MOSFET Technology „ Max rDS(on) = 51 mΩ at VGS = 10 V, ID = 4.6 A „ Max rDS(on) = 70 mΩ at VGS = 6 V, ID = 3.9 A „ Advanced package and silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance and yet...