Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology.
OringFET / Load Switching
Synchronous rectification
DC-DC Conversion
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSF
Features
- Extended TJ rating to 175°C.
- Shielded Gate MOSFET Technology.
- Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A.
- Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A.
- Advanced Package and Silicon combination for low rDS(on)
and high efficiency.
- Next generation enhanced body diode technology, engineered for soft recovery.
- MSL1 robust package design.
- 100% UIL tested.
- RoHS Compliant
General.
FDMS86255ET150-FairchildSemiconductor.pdf
