Datasheet Summary
FDMS86550 N-Channel PowerTrench® MOSFET
March 2015
N-Channel PowerTrench® MOSFET
60 V, 234 A, 1.65 mΩ
Features
General Description
- Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
- Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant
Applications
- Primary DC-DC MOSFET
- Secondary Synchronous Rectifier
- Load Switch
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