Datasheet4U Logo Datasheet4U.com

FDMS86550 - MOSFET

Datasheet Summary

Description

Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process tha

Features

  • General.

📥 Download Datasheet

Datasheet preview – FDMS86550

Datasheet Details

Part number FDMS86550
Manufacturer Fairchild Semiconductor
File Size 222.26 KB
Description MOSFET
Datasheet download datasheet FDMS86550 Datasheet
Additional preview pages of the FDMS86550 datasheet.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FDMS86550 N-Channel PowerTrench® MOSFET March 2015 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 234 A, 1.65 mΩ Features General Description „ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Published: |