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FDMS86550 - MOSFET

General Description

Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process tha

Key Features

  • General.

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FDMS86550 N-Channel PowerTrench® MOSFET March 2015 FDMS86550 N-Channel PowerTrench® MOSFET 60 V, 234 A, 1.65 mΩ Features General Description „ Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A „ Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.