FDMS86550 Description
Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A Advanced Package and Silicon bination for low rDS(on) and high efficiency This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. MSL1 robust package design ...
FDMS86550 Key Features
- Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
- Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
- Advanced Package and Silicon bination for low rDS(on) and high efficiency
- MSL1 robust package design
- 100% UIL tested
- RoHS pliant