Datasheet Details
| Part number | FDMS8692 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 251.17 KB |
| Description | N-Channel MOSFET |
| Download | FDMS8692 Download (PDF) |
|
|
| Part number | FDMS8692 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 251.17 KB |
| Description | N-Channel MOSFET |
| Download | FDMS8692 Download (PDF) |
|
|
|
Max rDS(on) = 9.0m:at VGS = 10V, ID = 12A Max rDS(on) = 14.0m: at VGS = 4.5V, ID = 10.5A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design RoHS Compliant The FDMS8692 has been designed to minimize losses in power conversion application.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Applications Low Side for Synchronous Buck to Power Core Processor Secondary Side Synchronous Rectifier Low Side Switch in POL DC/DC Converter Oring FET/ Load Switch Top Bottom Pin 1 S S S G D5 D6 D D D D Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction Temperature Range Thermal Characteristics (Note 1a) (Note 3) (Note 1a) Ratings 30 ±20 28 48 12 120 72 41 2.5 -55 to +150 Units V V A mJ W °C RTJC RTJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Package Marking and Ordering Information 3.0 (Note 1a) 50 °C/W Device Marking FDMS8692 Device FDMS8692 Package Power 56 Reel Size 13’’ Tape Width 12mm Quantity 3000units ©2009 Fairchild Semiconductor Corporation 1 FDMS8692 Rev.C4 www.fairchildsemi.com FDMS8692 N-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25°C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS 'BVDSS 'TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown V
FDMS8692 N-Channel PowerTrench® MOSFET FDMS8692 N-Channel PowerTrench® MOSFET 30V, 28A, 9.
| Part Number | Description |
|---|---|
| FDMS8690 | N-Channel MOSFET |
| FDMS86101 | N-Channel MOSFET |
| FDMS86101A | N-Channel MOSFET |
| FDMS86101DC | N-Channel MOSFET |
| FDMS86102LZ | N-Channel MOSFET |
| FDMS86103L | N-Channel MOSFET |
| FDMS86104 | N-Channel MOSFET |
| FDMS86105 | N-Channel MOSFET |
| FDMS86150 | N-Channel MOSFET |
| FDMS86150ET100 | MOSFET |