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FDP023N08B Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDP023N08B — N-Channel PowerTrench® MOSFET FDP023N08B N-Channel PowerTrench® MOSFET 75 V, 242 A, 2.

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

Applications • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • DC motor Drives and Uninterruptible Power Supplies • Micro Solar Inverte D GDS TO-220 G S MOSFET Maximum Ratings TC = 25oC unless otherwise noted.

Symbol Parameter VDSS VGSS ID IDM EAS dv/dt PD Drain to Source Voltage Gate to Source Voltage Drain

Key Features

  • RDS(on) = 1.96 mΩ ( Typ. ) @ VGS = 10 V, ID = 75 A.
  • Low FOM RDS(on).
  • QG.
  • Low Reverse Recovery Charge, Qrr.
  • Soft Reverse Recovery Body Diode.
  • Enables Highly Efficiency in Synchronous Rectification.
  • Fast Switching Speed.
  • 100% UIL Tested.
  • RoHS Compliant.

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