FDP025N06 Key Features
- RDS(on) = 1.9 mΩ (Typ.) @ VGS = 10 V, ID = 75 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low
- High Power and Current Handling Capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDP020N06B | N-Channel PowerTrench MOSFET |
| FDP023N08B | MOSFET |
| FDP027N08B | N-Channel PowerTrench MOSFET |
| FDP030N06 | MOSFET |
| FDP030N06B_F102 | MOSFET |