FDP12N35 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* 12A, 350V, RDS(on) = 0.38Ω @VGS = 10 V
* Low gate charge ( typical 18 nC)
* Low Crss ( typical 15 pF)
* Fast switching
* Improved dv/dt capability .

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

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