FDP5N50NZ Key Features
- R DS(on) = 1.38 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A
- Low Gate Charge (Typ. 9 nC)
- Low CRSS (Typ. 4 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant
- Part: FDP5N50NZ
- Manufacturer: Fairchild (official site)
- Size: 1.10 MB
Related Fairchild Datasheets
| Part Number | Description |
|---|---|
| FDP5N50 | N-Channel MOSFET |
| FDP5N50F | N-Channel MOSFET |
| FDP5N50U | N-Channel MOSFET |
| FDP5N60NZ | MOSFET |
| FDP51N25 | N-Channel UniFET MOSFET |
FDP5N50NZ Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress.