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Fairchild Semiconductor Electronic Components Datasheet

FDPF10N60ZUT Datasheet

N-Channel UniFET Ultra FRFET MOSFET

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FDPF10N60ZUT
N-Channel UniFETTM Ultra FRFETTM MOSFET
600 V, 9 A, 800 mΩ
December 2013
Features
• RDS(on) = 650 mΩ (Typ.) @ VGS = 10 V, ID = 4.5 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 15 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• RoHS Compliant
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage
MOSFET family based on advanced planar stripe and DMOS
technology. This advanced MOSFET family has the smallest
on-state resistance among the planar MOSFET, and also pro-
vides superior switching performance and higher avalanche
energy strength. In addition, internal gate-source ESD diode
allows UniFET II MOSFET to withstand over 2kV HBM surge
stress. UniFET II Ultra FRFETTM MOSFET has much superior
body diode reverse recovery performance. Its trr is less than
50nsec and the reverse dv/dt immunity is 20V/nsec while nor-
mal planar MOSFETs have over 200nsec and 4.5V/nsec
respectively. Therefore UniFET II Ultra FRFET MOSFET can
remove additional component and improve system reliability in
certain applications that require performance improvement of
the MOSFET’s body diode. This device family is suitable for
switching power converter applications such as power factor
correction (PFC), flat panel display (FPD) TV power, ATX and
electronic lamp ballasts.
D
GDS
TO-220F
G
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate Above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
Operating and Storage Temperature Range
TL Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
S
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
©2009 Fairchild Semiconductor Corporation
FDPF10N60ZUT Rev. C1
1
FDPF10N60ZUT
600
±30
9*
5.4*
36*
100
9
18
20
42
0.3
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
FDPF10N60ZUT
3.0
62.5
Unit
oC/W
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

FDPF10N60ZUT Datasheet

N-Channel UniFET Ultra FRFET MOSFET

No Preview Available !

Package Marking and Ordering Information
Part Number
FDPF10N60ZUT
Top Mark
FDPF10N60ZUT
Package
TO-220F
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
50 units
Electrical Characteristics TC = 25oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
/ ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250 μA, VGS = 0 V, TJ = 25oC
ID = 250 μA, Referenced to 25oC
VDS = 600 V, VGS = 0 V
VDS = 480 V, TC = 125oC
VGS = ±30 V, VDS = 0 V
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = 10 V, ID = 4.5 A
VDS = 40 V, ID = 4.5 A
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25 V, VGS = 0 V,
f = 1 MHz
VDS = 480 V, ID = 10 A,
VGS = 10 V
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 300 V, ID = 10 A,
RG = 25 Ω , VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics
IS Maximum Continuous Drain to Source Diode Forward Current
ISM Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0 V, ISD = 10 A
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, ISD = 10 A,
dIF/dt = 100 A/μs
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 2 mH, IAS = 10 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. ISD 10 A, di/dt 200 A/μs, VDD BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Min.
600
-
-
-
-
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.8
-
-
-
-
0.65
12.5
1490
230
15
31
8
12
25
40
95
60
-
-
-
45
52
Max. Unit
-V
- V/oC
25
250
μA
±10 μA
5.0 V
0.80 Ω
-S
1980
240
25
40
-
-
pF
pF
pF
nC
nC
nC
60 ns
90 ns
200 ns
130 ns
9* A
36 A
1.6 V
- ns
- nC
©2009 Fairchild Semiconductor Corporation
FDPF10N60ZUT Rev. C1
2
www.fairchildsemi.com


Part Number FDPF10N60ZUT
Description N-Channel UniFET Ultra FRFET MOSFET
Maker Fairchild Semiconductor
Total Page 8 Pages
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