Datasheet Summary
FDP15N65 / FDPF15N65 650V N-Channel MOSFET
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
- 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V
- Low gate charge ( typical 48.5 nC)
- Low Crss ( typical 23.6 pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
April 2007
UniFET TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient...