FDPF15N40 Datasheet | Fairchild Semiconductor

FDP15N40 / FDPF15N40 N-Channel MOSFET October 2008 FDP15N40 / FDPF15N40 N-Channel MOSFET 400V, 15A, 0.3Ω Features - RDS(on) = 0.24Ω ( Typ.)@ VGS = 10V, ID = 7.5A - Low Gate Charge ( Typ. 28n C) - Low Crss ( Typ. 17p F) - Fast Switching - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Uni FETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. G G DS TO-220 FDP Series GD S TO-220F FDPF Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted- Symbol VDSS .. V Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25o C) - Derate above 25o C -Continuous (TC = 25o C) -Continuous (TC = 100o C) - Pulsed (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) FDP15N40 FDPF15N40 400 ±30 15- 9- 60- 731 15 17 15 Units V V A A m J A m J V/ns ID IDM EAS IAR EAR dv/dt PD TJ, TSTG TL 15 9 60 170 1.45 -55 to +150...