FDPF15N65 Datasheet | Fairchild Semiconductor

FDP15N65 / FDPF15N65 650V N-Channel MOSFET FDP15N65 / FDPF15N65 650V N-Channel MOSFET Features - 15A, 650V, RDS(on) = 0.44Ω @VGS = 10 V - Low gate charge ( typical 48.5 n C) - Low Crss ( typical 23.6 p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability April 2007 Uni FET TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. TO-220 FDP Series GD S TO-220F FDPF...