FDR8305N - N-Channel MOSFET
FDR8305N Features
* 4.5 A, 20 V. RDS(ON) = 0.022 Ω @ VGS = 4.5 V RDS(ON) = 0.028 Ω @ VGS = 2.5 V.
* Low gate charge (16.2nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). Small footprint (38% smaller than a standard SO-8);l
