FDS3890 mosfet equivalent, n-channel mosfet.
4.7 A, 80 V. RDS(ON) = 44 mΩ @ VGS = 10 V RDS(ON) = 50 mΩ @ VGS = 6 V
* Fast switching speed
* High performance trench technology for extremely low RDS(ON)
*.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOS.
Image gallery
TAGS
Download (Size : 85.08KB)