FDS4895C mosfet equivalent, dual n & p-channel powertrench mosfet.
* Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V
* Q2: P-Channel RDS(on) = 63mΩ @ VGS =
–4.5V
* High power and handling ca.
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switchin.
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