FDS4895C Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance.
FDS4895C Key Features
- Q1: N-Channel RDS(on) = 39mΩ @ VGS = 10V RDS(on) = 57mΩ @ VGS = 7V
- Q2: P-Channel RDS(on) = 63mΩ @ VGS = -4.5V
- High power and handling capability in a widely used surface mount package -4.4A, -40V RDS(on) = 46mΩ @ VGS = -10V 5.5A,
- Motor Control DC/DC conversion